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max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod evaluation kit available 19-3918; rev 2; 4/13 for pricing, delivery, and ordering information, please contact maxim direct at 1-888-629-4642, or visit maxim integrated? website at www.maximintegrated.com. general description the max2021 low-noise, high-linearity, direct upcon- version/downconversion quadrature modulator/demod- ulator is designed for rfid handheld and portal readers, as well as single and multicarrier 650mhz to 1200mhz gsm/edge, cdma2000 , wcdma, and iden base-station applications. direct conversion architectures are advantageous since they significantly reduce transmitter or receiver cost, part count, and power consumption as compared to traditional if-based double conversion systems. in addition to offering excellent linearity and noise perfor- mance, the max2021 also yields a high level of compo- nent integration. this device includes two matched passive mixers for modulating or demodulating in-phase and quadrature signals, two lo mixer amplifier drivers, and an lo quadrature splitter. on-chip baluns are also integrated to allow for single-ended rf and lo connec- tions. as an added feature, the baseband inputs have been matched to allow for direct interfacing to the trans- mit dac, thereby eliminating the need for costly i/q buffer amplifiers. the max2021 operates from a single +5v supply. it is available in a compact 36-pin tqfn package (6mm x 6mm) with an exposed pad. electrical performance is guaranteed over the extended -40? to +85? temper- ature range. applications rfid handheld and portal readers single and multicarrier wcdma 850 base stations single and multicarrier cdmaone and cdma2000 base stations gsm 850/gsm 900 edge base stations predistortion transmitters and receivers wimax transmitters and receivers fixed broadband wireless access military systems microwave links digital and spread-spectrum communication systems video-on-demand (vod) and docsis compliant edge qam modulation cable modem termination systems (cmts) features ? 650mhz to 1200mhz rf frequency range ? scalable power: external current-setting resistors provide option for operating device in reduced-power/reduced-performance mode ? 36-pin, 6mm x 6mm tqfn provides high isolation in a small package modulator operation: ? meets 4-carrier wcdma 65dbc aclr ? +21dbm typical oip3 ? +58dbm typical oip2 ? +16.7dbm typical op 1db ? -32dbm typical lo leakage ? 43.5dbc typical sideband suppression ? -174dbm/hz output noise density ? dc to 550mhz baseband input allows a direct launch dac interface, eliminating the need for costly i/q buffer amplifiers ? dc-coupled input allows ability for customer offset voltage control demodulator operation: ? +35.2dbm typical iip3 ? +76dbm typical iip2 ? > 30dbm ip 1db ? 9.2db typical conversion loss ? 9.3db typical nf ? 0.06db typical i/q gain imbalance ? 0.15 i/q typical phase imbalance ordering information part temp range pin-package MAX2021ETX+ -40c to +85c 36 tqfn-ep* (6mm x 6mm) MAX2021ETX+t -40c to +85c 36 tqfn-ep* (6mm x 6mm) + denotes a lead(pb)-free/rohs-compliant package. * ep = exposed pad. t = tape and reel. cdma2000 is a registered certification mark and registered service mark of the telecommunications industry association. iden is a registered trademark of motorola trademark holdings, llc. cdmaone is a trademark of cdma development group.
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 2 maxim integrated absolute maximum ratings stresses beyond those listed under ?bsolute maximum ratings?may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. vcc_ to gnd ........................................................-0.3v to +5.5v bbi+, bbi-, bbq+, bbq- to gnd...............-3.5v to (v cc + 0.3v) lo, rf to gnd maximum current ......................................30ma rf input power ...............................................................+30dbm baseband differential i/q input power...........................+20dbm lo input power...............................................................+10dbm rbiaslo1 maximum current .............................................10ma rbiaslo2 maximum current .............................................10ma rbiaslo3 maximum current .............................................10ma continuous power dissipation (note 1) ...............................7.6w operating case temperature range (note 2) ....-40? to +85? maximum junction temperature .....................................+150? storage temperature range .............................-65? to +150? lead temperature (soldering, 10s) .................................+300? soldering temperature (reflow) .......................................+260? dc electrical characteristics (max2021 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q inputs terminated into 50 ? to gnd, lo input terminated into 50 ? , rf output terminated into 50 ? , 0v common-mode input, r1 = 432 ? , r2 = 619 ? , r3 = 332 ? , t c = -40? to +85?, unless otherwise noted. typical values are at v cc = 5v, t c = +25?, unless otherwise noted.) parameter symbol conditions min typ max units supply voltage v cc 4.75 5.00 5.25 v total supply current i total pins 3, 13, 15, 31, 33 all connected to v cc 230 271 315 ma total power dissipation 1355 1654 mw recommended ac operating conditions parameter symbol conditions min typ max unit rf frequency (note 5) f rf 650 1200 mhz lo frequency (note 5) f lo 750 1200 mhz if frequency (note 5) f if 550 mhz lo power range p lo -6 +3 dbm note 1: based on junction temperature t j = t c + ( jc x v cc x i cc ). this formula can be used when the temperature of the exposed pad is known while the device is soldered down to a pcb. see the applications information section for details. the junction temperature must not exceed +150?. note 2: t c is the temperature on the exposed pad of the package. t a is the ambient temperature of the device and pcb. note 3: junction temperature t j = t a + ( ja x v cc x i cc ). this formula can be used when the ambient temperature of the pcb is known. the junction temperature must not exceed +150?. note 4: package thermal resistances were obtained using the method described in jedec specification jesd51-7, using a four-layer board. for detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial . package thermal characteristics tqfn junction-to-ambient thermal resistance ( ja ) (notes 3, 4) .......................+34?/w junction-to-case thermal resistance ( jc ) (notes 1, 4) ......................+8.5?/w
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 3 maxim integrated ac electrical characteristics (modulator) (max2021 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 ? dc-coupled source, 0v common-mode input, p lo = 0dbm, 750mhz f lo 1200mhz, 50 ? lo and rf system impedance, r1 = 432 ? , r2 = 619 ? , r3 = 332 ? , t c = -40? to +85?. typical values are at v cc = 5v, v bbi = 1.4v p-p differential, v bbq = 1.4v p-p differential, f iq = 1mhz, f lo = 900mhz, t c = +25?, unless otherwise noted.) (note 6) parameter symbol conditions min typ max units baseband input baseband input differential impedance f iq = 1mhz 53 bb common-mode input voltage range -3.5 0 +3.5 v lo input lo input return loss rf and if terminated (note 7) 12 db i/q mixer outputs f lo = 900mhz 21.1 output ip3 oip3 f bb1 = 1.8mhz, f bb2 = 1.9mhz f lo = 1000mhz 22.3 dbm output ip2 oip2 f bb1 = 1.8mhz, f bb2 = 1.9mhz 57.9 dbm output p1db f bb = 25mhz, p lo = 0dbm 16.7 dbm output power p out 0.7 dbm output power variation over temperature t c = -40c to +85c -0.016 db/c output-power flatness sweep f bb , p rf flatness for f bb from 1mhz to 50mhz 0.15 db aclr (1st adjacent channel 5mhz offset) single-carrier wcdma (note 8) 65 dbc lo leakage no external calibration, with each baseband input terminated in 50 -32 dbm p lo = 0dbm 30 39.6 sideband suppression no external calibration, f lo = 920mhz p lo = -3dbm 43.5 dbc output noise density each baseband input terminated in 50 (note 9) -174 dbm/hz output noise floor p out = 0dbm, f lo = 900mhz (note 10) -168 dbm/hz rf return loss (note 7) 15 db
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 4 maxim integrated parameter symbol conditions min typ max units rf input conversion loss l c f bb = 25mhz (note 11) 9.2 db noise figure nf f lo = 900mhz 9.3 db noise figure under-blocking nf block f blocker = 900mhz, p rf = 11dbm, f rf = f lo = 890mhz (note 12) 17.8 db input third-order intercept iip3 f rf1 = 925mhz, f rf2 = 926mhz, f lo = 900mhz, p rf = p lo = 0dbm, f spur = 24mhz 35.2 dbm input second-order intercept iip2 f rf1 = 925mhz, f rf2 = 926mhz, f lo = 900mhz, p rf = p lo = 0dbm, f spur = 51mhz 76 dbm input 1db compression p 1db f if = 50mhz, f lo = 900mhz, p lo = 0dbm 30 dbm i/q gain mismatch f bb = 1mhz, f lo = 900mhz, p lo = 0dbm 0.06 db p lo = 0dbm 1.1 i/q phase mismatch f bb = 1mhz, f lo = 900mhz p lo = -3dbm 0.15 degrees minimum demodulation 3db bandwidth lo = 1160mhz lo > rf > 550 mhz minimum 1db gain flatness lo = 1160mhz lo > rf > 450 mhz parameter symbol conditions min typ max units conversion loss lc 10.1 db noise figure nf ssb 10.4 db noise figure under blocking nf block f blocker = 700mhz, p blocker = 11dbm, f lo = 965mhz, f rf = 865mhz, (note 12) 19 db f rf1 = 780mhz, f rf2 = 781mhz, p rf1 = p rf2 = 0dbm, f if1 = 185mhz, f if2 = 184mhz 34.5 input third-order intercept point iip3 f rf1 = 780mhz, f rf2 = 735mhz, p rf1 = p rf2 = 0dbm, f if1 = 185mhz, f if2 = 230mhz 34.6 dbm ac electrical characteristics (demodulator) (max2021 typical application circuit when operated as a demodulator, v cc = 4.75v to 5.25v, gnd = 0v, i/q outputs are recombined using network shown in figure 5. losses of combining network not included in measurements. v dc for bbi+. bbi-, bbq+, bbq- = 0v, p rf = p lo = 0dbm, 750mhz f lo 1200mhz, 50 lo and rf system impedance, r1 = 432 , r2 = 619 , r3 = 332 , t c = -40? to +85?. typical values are at v cc = 5v, t c = +25?, unless otherwise noted.) (note 6) ac electrical characteristics (demodulator lo = 965mhz) ( typical application circuit when operated as a demodulator. i/q outputs are recombined using network shown in figure 5. losses of combining network not included in measurements. rf and lo ports are driven from 50 sources. typical values are for t a = +25?, v cc = 5.0v, i/q dc voltage return = 0v, p rf = 0dbm, p lo = 0dbm, f rf = 780mhz, f lo = 965mhz, f if = 185mhz, unless otherwise noted.)
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 5 maxim integrated parameter symbol conditions min typ max units f rf1 = 780mhz, f rf2 = 781mhz, p rf1 = p rf2 = 0dbm, f if1 = 185mhz, f if2 = 184mhz, f if1 + f if2 term 70.1 input second-order intercept point iip2 f rf1 = 780mhz, f rf2 = 735mhz, p rf1 = p rf2 = 0dbm, f if1 = 185mhz, f if2 = 230mhz, f if1 + f if2 term 70.2 dbm 2lo - 2rf, f rf = 872.5mhz, p rf = -10dbm 84 3lo - 3rf, f rf = 903.333mhz, p rf = -10dbm 99 3rf - 2lo, f rf = 705mhz, p rf = -10dbm 105 4rf - 3lo, f rf = 770mhz, p rf = -10dbm 114 spurious relative to a fundamental at 780mhz 5rf - 4lo, f rf = 809mhz, p rf = -10dbm 115 dbc input compression from linear p rf = 0dbm to 21dbm 0.17 db i/q gain mismatch 0.05 db i/q phase mismatch 0.4 degrees 1db conversion loss flatness f lo = 965mhz, f lo > f rf 400 mhz rf return loss 17 db lo return loss 12 db note 5: recommended functional range. not production tested. operation outside this range is possible, but with degraded performance of some parameters. note 6: guaranteed by design and characterization. note 7: parameter also applies to demodulator topology. note 8: single-carrier wcdma with 10.5db peak-to-average ratio at 0.1% complementary cumulative distribution function, p rf = -10dbm (p rf is chosen to give -65dbc aclr). note 9: no baseband drive input. measured with the inputs terminated in 50 . at low output levels, the output noise is thermal. note 10: the output noise versus p out curve has the slope of lo noise (ln dbc/hz) due to reciprocal mixing. note 11: conversion loss is measured from the single-ended rf input to single-ended combined baseband output. note 12: the lo noise (l = 10 (ln/10) ), determined from the modulator measurements can be used to deduce the noise figure under-blocking at operating temperature (tp in kelvin), f block = 1 + (lcn - 1) tp / to + lp block / (1000kto), where to = 290k, p block in mw, k is boltzmann? constant = 1.381 x 10 (-23) j/k, and lcn = 10 (lc/10) , lc is the conversion loss. noise figure under-blocking in db is nf block = 10 x log (f block ). refer to application note 3632: wideband lo noise in passive transmit-receive mixer ics . ac electrical characteristics (demodulator lo = 965mhz) (continued) ( typical application circuit when operated as a demodulator. i/q outputs are recombined using network shown in figure 5. losses of combining network not included in measurements. rf and lo ports are driven from 50 sources. typical values are for t a = +25?, v cc = 5.0v, i/q dc voltage return = 0v, p rf = 0dbm, p lo = 0dbm, f rf = 780mhz, f lo = 965mhz, f if = 185mhz, unless otherwise noted.)
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 6 maxim integrated typical operating characteristics (max2021 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 ? dc-coupled source, 0v common-mode input, p lo = 0dbm, 750mhz f lo 1200mhz, 50 ? lo and rf system impedance, r1 = 432 ? , r2 = 619 ? , r3 = 332 ? , t c = -40? to +85?. typical values are at v cc = 5v, v bbi = 1.4v p-p differential, v bbq = 1.4v p-p differential, f iq = 1mhz, f lo = 900mhz, t c = +25?, unless otherwise noted.) total supply current vs. temperature (t c ) max2021 toc01 temperature ( c) total supply current (ma) 60 35 10 -15 220 240 260 280 v cc = 4.75v v cc = 5.0v 300 200 -40 85 v cc = 5.25v aclr vs. output power per carrier max2021 toc02 output power per carrier (dbm) aclr (db) -17 -27 -37 -78 -76 -74 -72 -70 -68 -66 -64 -62 -60 -80 -47 -7 single-carrier wcdma adjacent channel alternate channel aclr vs. output power per carrier max2021 toc03 output power per carrier (dbm) aclr (db) -17 -27 -37 -78 -76 -74 -72 -70 -68 -66 -64 -62 -60 -80 -47 -7 adjacent channel alternate channel two-carrier wcdma aclr vs. output power per carrier max2021 toc04 output power per carrier (dbm) aclr (db) -17 -27 -37 -78 -76 -74 -72 -70 -68 -66 -64 -62 -60 -80 -47 -7 four-carrier wcdma adjacent channel alternate channel sideband suppression vs. lo frequency max2021 toc05 lo frequency (mhz) sideband suppression (dbc) 1125 1050 975 900 825 20 30 40 50 60 70 10 750 1200 p lo = -3dbm p lo = -6dbm p lo = 0dbm p lo = +3dbm sideband suppression vs. lo frequency max2021 toc06 lo frequency (mhz) sideband suppression (dbc) 1125 1050 975 900 825 20 30 40 50 60 70 10 750 1200 v cc = 4.75v, 5.0v, 5.25v sideband suppression vs. lo frequency max2021 toc07 lo frequency (mhz) sideband suppression (dbc) 1125 1050 975 900 825 20 30 40 50 60 70 10 750 1200 t c = +25 c t c = +85 c t c = -40 c output ip3 vs. lo frequency max2021 toc08 lo frequency (mhz) output ip3 (dbm) 1125 1050 975 900 825 15 20 25 30 10 750 1200 t c = -40 c t c = +85 c t c = +25 c p lo = 0dbm, v cc = 5.0v output ip3 vs. lo frequency max2021 toc09 lo frequency (mhz) output ip3 (dbm) 1125 1050 975 900 825 15 20 25 30 10 750 1200 v cc = 5.25v v cc = 5.0v v cc = 4.75v t c = +25 c modulator
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 7 maxim integrated output ip3 vs. lo frequency max2021 toc10 lo frequency (mhz) output ip3 (dbm) 1125 1050 975 900 825 15 20 25 30 10 750 1200 p lo = +3dbm p lo = -3dbm p lo = -6dbm p lo = 0dbm t c = +25 c output ip3 vs. common-mode voltage max2021 toc11 common-mode voltage (v) output ip3 (dbm) 1.75 0 -1.75 21 22 23 24 25 26 20 -3.50 3.50 f lo = 900mhz, p lo = 0dbm output ip3 vs. common-mode voltage max2021 toc12 common-mode voltage (v) output ip3 (dbm) 1.75 0 -1.75 21 22 23 24 25 26 20 -3.50 3.50 f lo = 1000mhz output ip2 vs. lo frequency max2021 toc13 lo frequency (mhz) output ip2 (dbm) 1125 1050 975 900 825 50 60 70 80 40 750 1200 t c = +25 c t c = -40 c t c = +85 c output ip2 vs. lo frequency max2021 toc14 lo frequency (mhz) output ip2 (dbm) 1125 1050 975 900 825 50 60 70 80 40 750 1200 v cc = 5.0v v cc = 5.25v v cc = 4.75v output ip2 vs. lo frequency max2021 toc15 lo frequency (mhz) output ip2 (dbm) 1125 1050 975 900 825 50 60 70 80 40 750 1200 p lo = +3dbm p lo = -6dbm p lo = -3dbm p lo = 0dbm output ip2 vs. common-mode voltage max2021 toc16 common-mode voltage (v) output ip2 (dbm) 1.75 0 -1.75 60 65 70 75 80 55 -3.50 3.50 f lo = 900mhz output ip2 vs. common-mode voltage max2021 toc17 common-mode voltage (v) output ip2 (dbm) 1.75 0 -1.75 60 55 65 70 50 -3.50 3.50 f lo = 1000mhz modulator output power vs. input power max2021 toc18 input power (dbm) output power (dbm) 19 16 25 22 13 10 5 0 15 20 -5 10 28 input split between i and q, f if = 25mhz, f lo = 900mhz v cc = 4.75v, 5.0v, 5.25v typical operating characteristics (continued) (max2021 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 ? dc-coupled source, 0v common-mode input, p lo = 0dbm, 750mhz f lo 1200mhz, 50 ? lo and rf system impedance, r1 = 432 ? , r2 = 619 ? , r3 = 332 ? , t c = -40? to +85?. typical values are at v cc = 5v, v bbi = 1.4v p-p differential, v bbq = 1.4v p-p differential, f iq = 1mhz, f lo = 900mhz, t c = +25?, unless otherwise noted.) modulator
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 8 maxim integrated modulator output power vs. input power max2021 toc19 input power (dbm) output power (dbm) 19 16 25 22 13 10 5 0 15 20 -5 10 28 input split between i and q, f if = 25mhz, f lo = 900mhz p lo = -6dbm, -3dbm, 0dbm, +3dbm modulator output power vs. lo frequency max2021 toc20 lo frequency (mhz) output power (dbm) 975 900 1125 1050 825 1 -1 -3 3 5 -5 750 1200 t c = -40 c t c = +85 c t c = +25 c v bbi = v bbq = 1.4v p-p differential lo leakage vs. lo frequency max2021 toc21 lo frequency (mhz) lo leakage (dbm) 959 948 937 926 -90 -80 -70 -60 -50 -40 -100 915 970 p rf = -40dbm p rf = -7dbm p rf = -1dbm lo leakage nulled at p rf = -1dbm p rf = +5dbm lo leakage vs. lo frequency max2021 toc22 lo frequency (mhz) lo leakage (dbm) 959 948 937 926 -90 -80 -70 -60 -50 -40 -100 915 970 t c = -40 c t c = +85 c t c = +25 c p rf = -1dbm, lo leakage nulled at t c = +25 c lo leakage vs. lo frequency max2021 toc23 lo frequency (mhz) lo leakage (dbm) 959 948 937 926 -90 -80 -70 -60 -50 -40 -100 915 970 p lo = -6dbm p lo = +3dbm p lo = -3dbm p lo = 0dbm p rf = -1dbm, lo leakage nulled at p lo = 0dbm output noise vs. output power max2021 toc24 output power (dbm) output noise (dbm/hz) 10 5 0 -5 -10 -175 -170 -165 -160 -155 -150 -180 -15 15 t c = +25 c, f lo = 900mhz p lo = -6dbm p lo = -3dbm p lo = 0dbm p lo = +3dbm output noise vs. output power max2021 toc25 output power (dbm) output noise (dbm/hz) 10 5 0 -5 -10 -175 -170 -165 -160 -155 -150 -180 -15 15 p lo = 0dbm, f lo = 900mhz t c = +85 c t c = -40 c t c = +25 c typical operating characteristics (continued) (max2021 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q differential inputs driven from a 100 ? dc-coupled source, 0v common-mode input, p lo = 0dbm, 750mhz f lo 1200mhz, 50 ? lo and rf system impedance, r1 = 432 ? , r2 = 619 ? , r3 = 332 ? , t c = -40? to +85?. typical values are at v cc = 5v, v bbi = 1.4v p-p differential, v bbq = 1.4v p-p differential, f iq = 1mhz, f lo = 900mhz, t c = +25?, unless otherwise noted.) modulator
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 9 maxim integrated demodulator conversion loss vs. lo frequency max2021 toc26 lo frequency (mhz) demodulator conversion loss (db) 975 900 1125 1050 825 10 9 8 11 12 7 750 1200 p lo = 0dbm, v cc = 5.0v t c = +85 c t c = +25 c t c = -40 c demodulator input ip3 vs. lo frequency max2021 toc27 lo frequency (mhz) demodulator input ip3 (dbm) 975 900 1125 1050 825 36 34 32 38 40 30 750 1200 p lo = 0dbm, t c = +25 c v cc = 4.75v v cc = 5.25v v cc = 5.0v demodulator input ip3 vs. lo frequency max2021 toc28 lo frequency (mhz) demodulator input ip3 (dbm) 975 900 1125 1050 825 36 34 32 38 40 30 750 1200 p lo = 0dbm, v cc = 5.0v t c = +85 c t c = +25 c t c = -40 c demodulator input ip2 vs. lo frequency max2021 toc29 lo frequency (mhz) demodulator input ip2 (dbm) 1125 1050 975 900 825 60 70 80 90 50 750 1200 t c = -40 c t c = +85 c t c = +25 c p lo = 0dbm, v cc = 5.0v demodulator phase imbalance vs. lo frequency max2021 toc30 demodulator phase imbalance (deg) -8 -6 -4 -2 0 2 4 6 8 10 -10 lo frequency (mhz) 1125 1050 975 900 825 750 1200 p lo = -3dbm p lo = 0dbm p lo = +3dbm p lo = -6dbm max2021 toc31 -0.15 -0.10 -0.05 0 0.05 0.10 0.15 0.20 -0.20 demodulator amplitude imbalance vs. lo frequency demodulator amplitude imbalance (db) lo frequency (mhz) 1125 1050 975 900 825 750 1200 p lo = -6dbm, -3dbm, 0dbm, +3dbm typical operating characteristics (max2021 typical application circuit , v cc = 4.75v to 5.25v, gnd = 0v, i/q outputs are recombined using network shown in figure 5. losses of combining network not included in measurements. p rf = 5dbm, p lo = 0dbm, 750mhz f lo 1200mhz, 50 ? lo and rf sys- tem impedance, r1 = 432 ? , r2 = 619 ? , r3 = 332 ? , t c = -40? to +85?. typical values are at v cc = 5v, f lo = 900mhz, t c = +25?, unless otherwise noted.) lo port return loss vs. lo frequency max2021 toc32 lo frequency (mhz) lo port return loss (db) 975 900 1125 1050 825 +10 +15 +20 +5 0 +25 750 1200 p lo = -6dbm, -3dbm p lo = +3dbm p lo = 0dbm rf port return loss vs. lo frequency max2021 toc33 lo frequency (mhz) rf port return loss (db) 1130 1035 940 845 +40 +35 +30 +25 +20 +15 +10 +5 0 +45 750 1225 p lo = -6dbm, -3dbm, 0dbm, +3dbm if flatness vs. baseband frequency max2021 toc34 baseband frequency (mhz) if output power (dbm) 70 60 10 20 30 40 50 -11 -10 -9 -8 -7 -6 -5 -4 -12 080 f lo = 1000mhz f lo = 900mhz p lo = 0dbm demodulator (variable lo)
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 10 maxim integrated conversion loss vs. rf frequency max2021 toc35 rf frequency (mhz) conversion loss (db) 830 785 740 695 8 9 10 11 12 7 650 875 f lo = 965mhz i/q gain mismatch vs. if frequency max2021 toc36 if frequency (mhz) gain mismatch (db) 270 225 180 135 -0.05 0 0.05 0.10 -0.10 90 315 f lo = 965mhz i/q phase mismatch vs. if frequency max2021 toc37 if frequency (mhz) phase mismatch (deg) 270 225 180 135 -0.5 0 0.5 1.0 1.5 2.0 -1.0 90 315 f lo = 965mhz input ip3 vs. rf frequency max2021 toc38 rf frequency (mhz) input ip3 (dbm) 875 800 725 33 34 35 36 37 38 32 650 950 p rf = 0dbm/tone f lo = 965mhz 1mhz tone delta 45mhz tone delta input ip2 vs. rf frequency max2021 toc39 rf frequency (mhz) input ip2 (dbm) 875 800 725 65 70 75 80 85 90 60 650 950 1mhz tone delta 45mhz tone delta p rf = 0dbm/tone f lo = 965mhz typical operating characteristics (max2021 typical application circuit , v cc = 5.0v, gnd = 0v, i/q outputs are recombined using network shown in figure 5. losses of combining network not included in measurements. p rf = 0dbm, p lo = 0dbm, f lo = 965mhz, f if = f lo - f rf , 50 ? lo and rf system impedance, r1 = 432 ? , r2 = 619 ? , r3 = 332 ? , t a = +25?, unless otherwise noted.) demodulator (fixed lo)
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 11 maxim integrated detailed description the max2021 is designed for upconverting differential in-phase (i) and quadrature (q) inputs from baseband to a 650mhz to 1200mhz rf frequency range. the device can also be used as a demodulator, downcon- verting an rf input signal directly to baseband. applications include rfid handheld and portal readers, as well as single and multicarrier gsm/edge, cdma2000, wcdma, and iden base stations. direct conversion architectures are advantageous since they significantly reduce transmitter or receiver cost, part count, and power consumption as compared to tradition- al if-based double conversion systems. the max2021 integrates internal baluns, an lo buffer, a phase splitter, two lo driver amplifiers, two matched double-balanced passive mixers, and a wideband quadrature combiner. the max2021? high-linearity mix- ers, in conjunction with the part? precise in-phase and quadrature channel matching, enable the device to pos- sess excellent dynamic range, aclr, 1db compression point, and lo and sideband suppression characteris- tics. these features make the max2021 ideal for four- carrier wcdma operation. lo input balun, lo buffer, and phase splitter the max2021 requires a single-ended lo input, with a nominal power of 0dbm. an internal low-loss balun at the lo input converts the single-ended lo signal to a differential signal at the lo buffer input. in addition, the internal balun matches the buffer? input impedance to 50 ? over the entire band of operation. the output of the lo buffer goes through a phase split- ter, which generates a second lo signal that is shifted by 90 with respect to the original. the 0 and 90 lo signals drive the i and q mixers, respectively. lo driver following the phase splitter, the 0 and 90 lo signals are each amplified by a two-stage amplifier to drive the i and q mixers. the amplifier boosts the level of the lo pin description pin name function 1, 5, 9?12, 14, 16?19, 22, 24, 27?30, 32, 34?36 gnd ground 2 rbiaslo3 3rd lo amplifier bias. connect a 332 resistor to ground. 3 vccloa lo input buffer amplifier supply voltage. bypass to gnd with 33pf and 0.1f capacitors as close as possible to the pin. 4 lo local oscillator input. 50 input impedance. requires a dc-blocking capacitor. 6 rbiaslo1 1st lo input buffer amplifier bias. connect a 432 resistor to ground. 7 n.c. no connection. leave unconnected. 8 rbiaslo2 2nd lo amplifier bias. connect a 619 resistor to ground. 13 vccloi1 i-channel 1st lo amplifier supply voltage. bypass to gnd with 33pf and 0.1f capacitors as close as possible to the pin. 15 vccloi2 i-channel 2nd lo amplifier supply voltage. bypass to gnd with 33pf and 0.1f capacitors as close as possible to the pin. 20 bbi+ baseband in-phase noninverting port 21 bbi- baseband in-phase inverting port 23 rf rf port. this port is matched to 50 . requires a dc-blocking capacitor. 25 bbq- baseband quadrature inverting port 26 bbq+ baseband quadrature noninverting port 31 vccloq2 q-channel 2nd lo amplifier supply voltage. bypass to gnd with 33pf and 0.1f capacitors as close as possible to the pin. 33 vccloq1 q-channel 1st lo amplifier supply voltage. bypass to gnd with 33pf and 0.1f capacitors as close as possible to the pin. ep gnd exposed ground pad. the exposed pad must be soldered to the ground plane using multiple vias.
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 12 maxim integrated signals to compensate for any changes in lo drive lev- els. the two-stage lo amplifier allows a wide input power range for the lo drive. the max2021 can toler- ate lo level swings from -6dbm to +3dbm. i/q modulator the max2021 modulator is composed of a pair of matched double-balanced passive mixers and a balun. the i and q differential baseband inputs accept signals from dc to 550mhz with differential amplitudes up to 4v p-p . the wide input bandwidths allow operation of the max2021 as either a direct rf modulator or as an image-reject mixer. the wide common-mode compli- ance range allows for direct interface with the base- band dacs. no active buffer circuitry is required between the baseband dacs and the max2021 for cdma2000 and wcdma applications. the i and q signals directly modulate the 0 and 90 lo signals and are upconverted to the rf frequency. the out- puts of the i and q mixers are combined through a balun to produce a singled-ended rf output. applications information lo input drive the lo input of the max2021 is internally matched to 50 ? , and requires a single-ended drive at a 750mhz to 1200mhz frequency range. an integrated balun con- verts the singled-ended input signal to a differential sig- nal at the lo buffer differential input. an external dc-blocking capacitor is the only external part required at this interface. the lo input power should be within the -6dbm to +3dbm range. an lo input power of -3dbm is recommended for best overall peformance. modulator baseband i/q input drive drive the max2021 i and q baseband inputs differen- tially for best performance. the baseband inputs have a 53 ? differential input impedance. the optimum source impedance for the i and q inputs is 100 ? differ- ential. this source impedance achieves the optimal sig- nal transfer to the i and q inputs, and the optimum output rf impedance match. the max2021 can accept input power levels of up to +20dbm on the i and q inputs. operation with complex waveforms, such as cdma carriers or gsm signals, utilize input power lev- els that are far lower. this lower power operation is made necessary by the high peak-to-average ratios of these complex waveforms. the peak signals must be kept below the compression level of the max2021. the four baseband ports need some form of dc return to establish a common mode that the on-chip circuitry drives. this can be achieved by directly dc-coupling to the baseband ports (staying within the ?.5v common- mode range), through an inductor to ground, or through a low-value resistor to ground. the max2021 is designed to interface directly with maxim high-speed dacs. this generates an ideal total transmitter lineup, with minimal ancillary circuit elements. such dacs include the max5875 series of dual dacs, and the max5895 dual interpolating dac. these dacs have ground-referenced differential current outputs. typical termination of each dac output into a 50 ? load resistor to ground, and a 10ma nominal dc output cur- rent results in a 0.5v common-mode dc level into the modulator i/q inputs. the nominal signal level provided by the dacs will be in the -12dbm range for a single cdma or wcdma carrier, reducing to -18dbm per car- rier for a four-carrier application. the i/q input bandwidth is greater than 50mhz at -0.1db response. the direct connection of the dac to the max2021 ensures the maximum signal fidelity, with no performance-limiting baseband amplifiers required. the dac output can be passed through a lowpass filter to remove the image frequencies from the dac? output response. the max5895 dual interpolating dac can be operated at interpolation rates up to x8. this has the benefit of moving the dac image frequencies to a very high, remote frequency, easing the design of the base- band filters. the dac? output noise floor and interpola- tion filter stopband attenuation are sufficiently good to ensure that the 3gpp noise floor requirement is met for large frequency offsets, 60mhz for example, with no fil- tering required on the rf output of the modulator. figure 1 illustrates the ease and efficiency of interfacing the max2021 with a maxim dac (in this case the max5895 dual 16-bit interpolating-modulating dac) and with maxim vga and vco/synth ics. the max5895 dac has programmable gain and differ- ential offset controls built in. these can be used to opti- mize the lo leakage and sideband suppression of the max2021 quadrature modulator. rf output the max2021 utilizes an internal passive mixer archi- tecture that enables the device to possess an excep- tionally low-output noise floor. with such architectures, the total output noise is typically a power summation of the theoretical thermal noise (ktb) and the noise contri- bution from the on-chip lo buffer circuitry. as demon- strated in the typical operating characteristics , the max2021? output noise approaches the thermal limit of -174dbm/hz for lower output power levels. as the out- put power increases, the noise level tracks the noise contribution from the lo buffer circuitry, which is approximately -168dbc/hz.
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 13 maxim integrated the i/q input power levels and the insertion loss of the device determine the rf output power level. the input power is a function of the delivered input i and q volt- ages to the internal 50 ? termination. for simple sinu- soidal baseband signals, a level of 89mv p-p differential on the i and the q inputs results in a -17dbm input power level delivered to the i and q internal 50 ? termi- nations. this results in an rf output power of -23.2dbm. external diplexer lo leakage at the rf port can be nulled to a level less than -80dbm by introducing dc offsets at the i and q ports. however, this null at the rf port can be compro- mised by an improperly terminated i/q if interface. care must be taken to match the i/q ports to the driving dac circuitry. without matching, the lo? second-order (2f lo ) term may leak back into the modulator? i/q input port where it can mix with the internal lo signal to produce additional lo leakage at the rf output. this leakage effectively counteracts against the lo nulling. in addi- tion, the lo signal reflected at the i/q if port produces a residual dc term that can disturb the nulling condition. as demonstrated in figure 2, providing an rc termina- tion on each of the i+, i-, q+, q- ports reduces the amount of lo leakage present at the rf port under rf-modulator lo rf 100 ? 100 ? l = 40nh c = 6.8pf l = 40nh i q 100 ? 100 ? c = 6.8pf c = 6.8pf 0 90 max2021 figure 2. diplexer network recommended for gsm 900 transmitter applications 12 i dac 50 i 31db 31db 17db rfout 50 i 12 q dac 50 i 50 i 0 90 c max2021 max5873 dual dac 45, 80, or 95mhz lo loopback out (feeds back into rx chain front end) rx off spi control spi logic max2058 rf digital vga max9491 vco + synth figure 1. transmitter lineup
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 14 maxim integrated varying temperature, lo frequency, and baseband drive conditions. see the typical operating characteristics for details. note that the resistor value is chosen to be 100 ? with a corner frequency 1 / (2 rc) selected to adequately filter the f lo and 2f lo leakage, yet not affecting the flatness of the baseband response at the highest baseband frequency. the common- mode f lo and 2f lo signals at i+/i- and q+/q- effective- ly see the rc networks and thus become terminated in 50 ? (r/2). the rc network provides a path for absorb- ing the 2f lo and f lo leakage, while the inductor pro- vides high impedance at f lo and 2f lo to help the diplexing process. rf demodulator the max2021 can also be used as an rf demodulator (see figure 3), downconverting an rf input signal directly to baseband. the single-ended rf input accepts signals from 650mhz to 1200mhz with power levels up to +30dbm. the passive mixer architecture produces a conversion loss of typically 9.2db. the downconverter is optimized for high linearity and excellent noise performance, typically with a +35.2dbm iip3, a p1db of greater than +30dbm, and a 9.3db noise figure. a wide i/q port bandwidth allows the port to be used as an image-reject mixer for downconversion to a quadra- ture if frequency. the rf and lo inputs are internally matched to 50 ? . thus, no matching components are required, and only dc-blocking capacitors are needed for interfacing. demodulator output port considerations much like in the modulator case, the four baseband ports require some form of dc return to establish a com- mon mode that the on-chip circuitry drives. this can be achieved by directly dc-coupling to the baseband ports (staying within the ?.5v common-mode range), through an inductor to ground, or through a low-value resistor to ground. figure 4 shows a typical network that would be used to connect to each baseband port for demodulator operation. this network provides a com- mon-mode dc return, implements a high-frequency diplexer to terminate unwanted rf terms, and also pro- vides an impedance transformation to a possible higher impedance baseband amplifier. the network c a , r a , l a and c b form a highpass/low- pass network to terminate the high frequencies into a load while passing the desired lower if frequencies. elements l a , c b , l b , c c , l c , and c d provide a possible impedance transformer. depending on the impedance being transformed and the desired bandwidth, a fewer number of elements could be used. it is suggested that l a and c b always be used since they are part of the high frequency diplexer. if power matching is not a concern then this would reduce the elements to just the diplexer. resistor r b provides a dc return to set the common mode voltage. in this case, due to the on-chip circuitry, the voltage would be approx 0v dc. it can also be used to reduce the load impedance of the next stage. inductor l d can provide a bit of high frequency gain peaking for wideband if systems. capacitor c e is a dc block. typical values for c a , r a , l a , and c b would be 1.5pf, 50 ? , 11nh, and 4.7pf, respectively. these values can change depending on the lo, rf, and if frequencies used. resistor r b is in the 50 ? to 200 ? range the circuitry presented in figure 4 does not allow for lo leakage at rf port nulling. depending on the lo at rf leakage requirement, a trim voltage might need to be introduced on the baseband ports to null the lo leakage. adc 90 0 rf lo max2021 diplexer/ dc return matching adc diplexer/ dc return matching figure 3. max2021 demodulator configuration
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 15 maxim integrated external stage l a r a c b c c c d c a l b r b l c l d c e max2021 i/q outputs figure 4. baseband port typical filtering and dc return network 3db pad dc block 0 3db pad dc block 180 mini-circuits zfsc-2-1w-s+ 0?combiner 3db pads look like 160 i to ground and provides the common-mode dc return for the on-chip circuitry. i+ i- 3db pad dc block 0 3db pad dc block 180 mini-circuits zfscj-2-1 mini-circuits zfscj-2-1 q+ q- 90 figure 5. demodulator combining diagram power scaling with changes to the bias resistors bias currents for the lo buffers are optimized by fine tuning resistors r1, r2, and r3. maxim recommends using ?%-tolerance resistors; however, standard ?% values can be used if the ?% components are not readily available. the resistor values shown in the typical application circuit were chosen to provide peak performance for the entire 650mhz to 1200mhz band. if desired, the current can be backed off from this nominal value by choosing different values for r1, r2, and r3. tables 1 and 2 outline the performance trade-offs that can be expected for various combina- tions of these bias resistors. as noted within the tables, the performance trade-offs may be more pronounced for different operating frequencies. contact the factory for additional details. layout considerations a properly designed pcb is an essential part of any rf/microwave circuit. keep rf signal lines as short as possible to reduce losses, radiation, and inductance. for the best performance, route the ground pin traces directly to the exposed pad under the package. the pcb exposed pad must be connected to the ground plane of the pcb. it is suggested that multiple vias be used to connect this pad to the lower-level ground planes. this method provides a good rf/thermal con- duction path for the device. solder the exposed pad on the bottom of the device package to the pcb. the max2021 evaluation kit can be used as a reference for board layout. gerber files are available upon request at www.maximintegrated.com .
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 16 maxim integrated note: v cc = 5v, p lo = 0dbm, t a = +25?, i/q voltage levels = 1.4v p-p differential. lo freq (mhz) rf freq (mhz) r1 ( ? ? ? ? ) r2 ( ? ? ? ? ) r3 ( ? ? ? ? ) i cc (ma) oip3 (dbm) lo leak (dbm) image rej (dbc) oip2 (dbm) 420 620 330 271 19.6 -32.1 23.9 50.5 453 665 360 253 21.9 -32.7 34.0 51.0 499 698 402 229 18.9 -33.7 30.0 52.6 549 806 464 205 15.7 -34.4 23.7 46.0 800 801.8 650 1000 550 173 13.6 -34.2 23.3 32.3 420 620 330 271 20.7 -31.4 43.4 54.0 453 665 360 253 21.6 -31.6 42.4 55.4 499 698 402 229 20.6 -31.8 42.7 59.8 549 806 464 205 19.0 -31.9 40.3 50.7 900 901.8 650 1000 550 173 14.9 -30.5 25.0 34.6 420 620 330 271 22.4 -32.8 39.3 55.5 453 665 360 253 22.2 -33.2 39.1 56.3 499 698 402 229 19.9 -33.8 43.5 55.0 549 806 464 205 17.6 -34.8 40.5 51.4 1000 1001.8 650 1000 550 173 14.6 -33.9 36.8 32.8 table 1. typical performance trade-offs as a function of current draw?odulator mode power-supply bypassing proper voltage-supply bypassing is essential for high- frequency circuit stability. bypass all vcc_ pins with 33pf and 0.1? capacitors placed as close to the pins as possible. the smallest capacitor should be placed closest to the device. to achieve optimum performance, use good voltage- supply layout techniques. the max2021 has several rf processing stages that use the various vcc_ pins, and while they have on-chip decoupling, off- chip interaction between them may degrade gain, lin- earity, carrier suppression, and output power-control range. excessive coupling between stages may degrade stability. exposed pad rf/thermal considerations the ep of the max2021? 36-pin tqfn-ep package provides a low thermal-resistance path to the die. it is important that the pcb on which the ic is mounted be designed to conduct heat from this contact. in addition, the ep provides a low-inductance rf ground path for the device. the exposed pad (ep) must be soldered to a ground plane on the pcb either directly or through an array of plated via holes. an array of 9 vias, in a 3 x 3 array, is suggested. soldering the pad to ground is critical for efficient heat transfer. use a solid ground plane wher- ever possible.
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 17 maxim integrated lo freq (mhz) rf freq (mhz) r1 ( ? ? ? ? ) r2 ( ? ? ? ? ) r3 ( ? ? ? ? ) i cc (ma) c o n ver sio n l o ss ( d b ) iip3 (dbm) 57mhz iip2 (dbm) 420 620 330 269 9.8 33.85 62.1 453 665 360 254 9.83 33.98 62.9 499 698 402 230 9.81 32.2 66.6 549 806 464 207 9.84 31.1 66.86 800 771 650 1000 550 173 9.95 29.87 65.25 420 620 330 269 9.21 33.1 68 453 665 360 254 9.25 33.9 66.87 499 698 402 230 9.36 34.77 66.7 549 806 464 207 9.39 35.3 66.6 900 871 650 1000 550 173 9.46 32 64.64 420 620 330 269 9.47 34.9 > 77.7 453 665 360 254 9.5 35.4 > 77.5 499 698 402 230 9.53 34.58 > 76.5 549 806 464 207 9.5 33.15 > 76.5 1000 971 650 1000 550 173 9.61 31.5 76 table 2. typical performance trade-offs as a function of current draw?emodulator mode note: used on pcb 180 combiners and off pcb quadrature combiner with v cc = 5v, p rf = -3dbm, p lo = 0dbm, t a = +25?, if1 = 28mhz, if2 = 29mhz.
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 18 maxim integrated chip information process: sige bicmos 1 2 3 4 5 6 7 8 9 10 11 12 13 14 tqfn (6mm x 6mm) 15 16 17 18 27 26 25 24 23 22 21 20 19 36 35 34 33 32 31 30 29 28 bias lo2 bias lo1 90 0 bias lo3 gnd bbi+ bbi- gnd rf gnd bbq- bbq+ gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd + rbiaslo3 vccloa lo gnd rbiaslo1 n.c. rbiaslo2 gnd gnd gnd vccloq2 gnd gnd gnd gnd max2021 vccloi1 vccloi2 vccloq1 ep pin configuration/functional diagram package type package code outline no. land pattern no. tqfn t3666+2 21-0141 90-0049 package information for the latest package outline information and land patterns (foot- prints), go to www.maximintegrated.com/packages . note that a ?? ?? or ??in the package code indicates rohs status only. package drawings may show a different suffix character, but the drawing pertains to the package regardless of rohs status.
max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod 19 maxim integrated 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 ep 27 26 25 24 23 22 21 20 19 36 35 34 33 32 31 30 29 28 bias lo2 bias lo1 90 0 bias lo3 gnd bbi+ bbi- gnd rf rf gnd bbq- bbq+ q+ q- gnd i- i+ c9 8.2pf c8 0.1 f v cc c7 33pf c5 0.1 f c6 33pf v cc gnd gnd gnd gnd vccloi1 vccloi2 gnd gnd gnd gnd gnd rbiaslo3 r3 332 ? c1 33pf c3 82pf c2 0.1 f v cc vccloa lo lo gnd rbiaslo1 r1 432 ? n.c. rbiaslo2 c11 0.1 f v cc c10 33pf c12 0.1 f c13 33pf v cc gnd gnd gnd vccloq2 gnd gnd gnd gnd max2021 vccloq1 r2 619 ? + typical application circuit component value description c1, c6, c7, c10, c13 33pf 33pf ?%, 50v c0g ceramic capacitors (0402) c2, c5, c8, c11, c12 0.1? 0.1? ?0%, 16v x7r ceramic capacitors (0603) c3 82pf 82pf ?%, 50v c0g ceramic capacitor (0402) c9 8.2pf 8.2pf ?.1pf, 50v c0g ceramic capacitor (0402) r1 432 ? 432 ? ?% resistor (0402) r2 619 ? 619 ? ?% resistor (0402) r3 332 ? 332 ? ?% resistor (0402) table 3. component list referring to the typical application circuit
maxim integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a maxim integr ated product. no circuit patent licenses are implied. maxim integrated reserves the right to change the circuitry and specifications without notice at any time . the parametric values (min and max limits) shown in the electrical characteristics table are guaranteed. other parametric values quoted in this data sheet are provided for guidance. 20 ________________________________ maxim integrated 160 rio robles, san jose, ca 95134 usa 1-408-601-1000 2013 maxim integrated products, inc. maxim integrated and the maxim integrated logo are trademarks of maxim integrated products , inc. max2021 high-dynamic-range, direct up-/downconversion 650mhz to 1200mhz quadrature mod/demod revision history revision number revision date description pages changed 0 7/06 initial release ? 1 6/12 updated features section; updated ordering information , absolute maximum ratings , dc electrical characteristics , pin description , ac electrical characteristics table, typical operating characteristics globals, detailed description section, i/q modulator section, baseband i/q input drive section, power scaling with the changes to the bias resistors section, typical application circuit , figures 1 ? 3, and table 1 1?3, 9?11, 14 2 4/13 updated electrical characteristics table; updated tocs 35 ? 39; updated title and features section 1, 2, 4, 8, 9, 12, 13

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